Low‐temperature gettering of trace iron and copper by misfit dislocations in Si/Si(Ge) epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112370
Reference12 articles.
1. Fundamental properties of intrinsic gettering of iron in a silicon wafer
2. Extrinsic gettering via the controlled introduction of misfit dislocations
3. Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel
4. Electron microscope study of electrically active impurity precipitate defects in silicon
5. Copper Precipitation on Dislocations in Silicon
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