Temperature Effect of a Heterojunction Bipolar Transistor with an Emitter-Edge-Thinning Structure-Reference-Cited by-同舟云学术

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Temperature Effect of a Heterojunction Bipolar Transistor with an Emitter-Edge-Thinning Structure

Published:2007 Issue:2 Volume:10 Page:H56
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Chen Tzu-Pin,Fu Ssu-I,Lour Wen-Shiung,Tsai Jung-Hui,Guo Der-Feng,Liu Wen-Chau

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference13 articles.

1. An ImprovedIn0.5Ga0.5P/GaAsDouble Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique

2. Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

3. Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure

4. Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs -doped single heterojunction bipolar transistors using an InGaP passivation layer

5. Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1−xAs layer at emitter/base heterojunction

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments;Superlattices and Microstructures;2009-10

2. On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs);Solid-State Electronics;2009-02

3. Effect of Emitter Ledge Thickness on InGaP∕GaAs Heterojunction Bipolar Transistors;Electrochemical and Solid-State Letters;2009

4. Visible light active carbon modified n-TiO2 for efficient hydrogen production by photoelectrochemical splitting of water;International Journal of Hydrogen Energy;2008-02

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