Evaluation of Dislocation Generation in U‐Groove Isolation-Reference-Cited by-同舟云学术

Evaluation of Dislocation Generation in U‐Groove Isolation

Published:1988-03-01 Issue:3 Volume:135 Page:726-730
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Tamaki Yoichi¹²,Isomae Seiichi¹²,Sagara Kazuhiko¹²,Kure Tokuo¹²,Kawamura Masao¹²

Affiliation:

1. Hitachi, Limited, Central Research Laboratory, Kokubunji, Tokyo 185, Japan

2. Hitachi, Limited, Device Development Center, Ome, Tokyo 198, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2095731/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman Investigation of Stress for Shallow Trench;Defect and Diffusion Forum;2007-05

2. Monitor and eliminate the circular defects in HDP–STI deposition through oxynitride/oxide composite liner;Thin Solid Films;2004-01

3. Mechanisms of circular defects for shallow trench isolation oxide deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

4. A ball-indentation method to evaluate the critical stress for dislocation generation in a silicon substrate;Fatigue & Fracture of Engineering Materials & Structures;2001-12-04

5. High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation;Journal of The Electrochemical Society;1999-03-01