Affiliation:
1. Technische Universität Ilmenau
2. North University of China
Abstract
A trench is used as a storage capacitor in dynamic memory (DRAM) technologies (deep storage
trenches), or as an isolation structure in CMOS, bipolar and BiCMOS technologies. But a shallow
trench structure has also been shown to be a major factor in substrate defect generation during
processing. Such defect generation is directly related to mechanical stresses existing around the
trench. This stress can be monitored, using Raman spectroscopy, to a stress resolution of 10MPa
and a spatial resolution of 0.2μm. In this paper, a trench structure is designed and fabricated, and
the test results for local stresses within the trench are shown to be in good correspondence with
theory.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
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