Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO[sub 2] Layer for Nanocrystal Memory Device-Reference-Cited by-同舟云学术

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Selective Incorporation of Colloidal Nanocrystals in Nanopatterned SiO[sub 2] Layer for Nanocrystal Memory Device

Published:2010 Issue:3 Volume:13 Page:K19
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Seo Il,Lee Do-Joong,Hu Quanli,Kwon Chang-Woo,Lim Kipil,Lee Seung-Hyun,Kim Hyun-Mi,Kim Yong-Sang,Lee Hyun Ho,Ryu Du Yeol,Kim Ki-Bum,Yoon Tae-Sik

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference25 articles.

1. A silicon nanocrystals based memory

2. Nanocrystal nonvolatile memory devices

3. Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

4. High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-volatile nano-floating gate memory with Pt-Fe2O3 composite nanoparticles and indium gallium zinc oxide channel;Journal of Nanoparticle Research;2013-01-20

2. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

3. Non-lithographic Patterning of Oxide-Embedded Silicon Nanoparticles;MRS Proceedings;2011

4. Vertically and Laterally Self-Aligned Double-Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device;ECS Transactions;2010-10-01

5. Vertically and Laterally Self-Aligned Double Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device;Electrochemical and Solid-State Letters;2010

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