Vertically and Laterally Self-Aligned Double Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device-Reference-Cited by-同舟云学术

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Vertically and Laterally Self-Aligned Double Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device

Published:2010 Issue:11 Volume:13 Page:H366
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Hu Quanli,Eom Tae-Kwang,Kim Soo-Hyun,Kim Hyung-Jun,Lee Hyun Ho,Kim Yong-Sang,Ryu Du Yeol,Kim Ki-Bum,Yoon Tae-Sik

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference22 articles.

1. Nonvolatile Memory With a Metal Nanocrystal/Nitride Heterogeneous Floating-Gate

2. Enhancement of Memory Performance Using Doubly Stacked Si-Nanocrystal Floating Gates Prepared by Ion Beam Sputtering in UHV

3. Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application

4. Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

5. Multilevel charge storage in silicon nanocrystal multilayers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique;IEEE Transactions on Electron Devices;2013-10

2. Non-volatile nano-floating gate memory with Pt-Fe2O3 composite nanoparticles and indium gallium zinc oxide channel;Journal of Nanoparticle Research;2013-01-20

3. Nanocrystal floating gate memory with solution-processed indium-zinc-tin-oxide channel and colloidal silver nanocrystals;Semiconductor Science and Technology;2011-11-16

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