High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2-Reference-Cited by-同舟云学术

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High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2

Published:2000-03 Issue:5 Volume:87 Page:2449-2453
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yoon Tae-Sik,Kwon Jang-Yeon,Lee Dong-Hoon,Kim Ki-Bum,Min Seok-Hong,Chae Dong-Hyuk,Kim Dae Hwan,Lee Jong Duk,Park Byung-Gook,Lee Hwack Joo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.372200

Reference11 articles.

1. Correlated discrete transfer of single electrons in ultrasmall tunnel junctions

2. Single‐electron memory

3. Room-temperature single-electron memory

4. A silicon nanocrystals based memory

5. The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: I . The System at High Temperatures

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1. Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals;Applied Surface Science;2017-10

2. Emerging opportunities: nanoelectronics and engineering research in a South Korean university;History and Technology;2014-10-02

3. Hysteresis and threshold switching characteristics in thin-film-transistors with inserted Pt-Fe2O3core–shell nanocrystals;Semiconductor Science and Technology;2014-09-26

4. Non-volatile nano-floating gate memory with Pt-Fe2O3 composite nanoparticles and indium gallium zinc oxide channel;Journal of Nanoparticle Research;2013-01-20

5. $\hbox{TiSi}_{2}$ Nanocrystal Metal Oxide Semiconductor Field Effect Transistor Memory;IEEE Transactions on Nanotechnology;2011-05

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