Hysteresis and threshold switching characteristics in thin-film-transistors with inserted Pt-Fe2O3core–shell nanocrystals-Reference-Cited by-同舟云学术

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Hysteresis and threshold switching characteristics in thin-film-transistors with inserted Pt-Fe2O3core–shell nanocrystals

Published:2014-09-26 Issue:11 Volume:29 Page:115017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Baek Yoon-Jae,Noh Young Jun,Choi Young Jin,Kang Chi Jung,Lee Hyun Ho,Yoon Tae-Sik

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=11/a=115017/pdf

Reference24 articles.

1. A silicon nanocrystals based memory

2. High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2

3. Nonvolatile Memory With a Metal Nanocrystal/Nitride Heterogeneous Floating-Gate

4. Enhancement of Memory Performance Using Doubly Stacked Si-Nanocrystal Floating Gates Prepared by Ion Beam Sputtering in UHV

5. CoSi2-coated Si nanocrystal memory

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