A Dislocation Formation Model of Trench‐Induced Dislocations in Dynamic Random Access Memories-Reference-Cited by-同舟云学术

A Dislocation Formation Model of Trench‐Induced Dislocations in Dynamic Random Access Memories

Published:1996-01-01 Issue:1 Volume:143 Page:210-215
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Dellith M.¹²³⁴,Booker G. R.¹²³⁴,Kolbesen B. O.¹²³⁴,Bergholz W.¹²³⁴,Gelsdorf F.¹²³⁴

Affiliation:

1. Department of Materials, Oxford University, Oxford OX1 3PH, England

2. Siemens AG, Abt. Halbleiter, 8000 München 83, Germany

3. Siemens AG, Abt. Halbleiter, 83009 Regensburg, Germany

4. Usine IBM/Siemens, Corbeil‐Essonnes, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836410/pdf

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