Split singularities and dislocation injection in strained silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753674
Reference30 articles.
1. Silicon Device Scaling to the Sub-10-nm Regime
2. A Dislocation Formation Model of Trench‐Induced Dislocations in Dynamic Random Access Memories
3. Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics
4. Method to analyze dislocation injection from sharp features in strained silicon structures
5. Split singularities: stress field near the edge of a silicon die on a polymer substrate
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