Method to analyze dislocation injection from sharp features in strained silicon structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2424665
Reference23 articles.
1. Silicon Device Scaling to the Sub-10-nm Regime
2. A Dislocation Formation Model of Trench‐Induced Dislocations in Dynamic Random Access Memories
3. Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics
4. Controlled nucleation of dislocations by a spatially localized stress field
5. Film‐edge‐induced stress in silicon substrates
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