Investigations of internal stresses in high-voltage devices with deep trenches-Reference-Cited by-同舟云学术

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Investigations of internal stresses in high-voltage devices with deep trenches

Published:2020-11 Issue:6 Volume:38 Page:064004
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Hieckmann Ellen¹,Mühle Uwe²,Chekhonin Paul³,Zschech Ehrenfried⁴,Gambino Jeff⁵

Affiliation:

1. Faculty of Physics, Institute of Applied Physics, TU Dresden, D-01062 Dresden, Germany

2. Robert Bosch Semiconductor Manufacturing Dresden GmbH, Knappsdorfer Straße 12, 01109 Dresden, Germany

3. Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, D-01328 Dresden, Germany

4. Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Maria-Reiche-Strasse 2, D-01109 Dresden, Germany

5. ON Semiconductor, 23400 NE Glisan Street, Gresham, Oregon 97030

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000515

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