Improvement of Barrier CMP Performance with Alkaline Slurry: Role of Ionic Strength
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Scratch formation and its mechanism in chemical mechanical planarization (CMP)
2. Novel retaining ring to reduce CMP edge exclusion
3. Atomistic scale nanoscratching behavior of monocrystalline Cu influenced by water film in CMP process
4. Influence of slurry components on copper CMP performance in alkaline slurry
5. Effect of surfactant and electrolyte on surface modification of c-plane GaN substrate using chemical mechanical planarization (CMP) process
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