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Atomistic scale nanoscratching behavior of monocrystalline Cu influenced by water film in CMP process

  • Published:2018-03 Issue: Volume:435 Page:983-992
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Shi Junqin,Chen Juan,Fang Liang,Sun Kun,Sun Jiapeng,Han Jing

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shaanxi Province of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. Material removal mechanism in chemical mechanical polishing: theory and modeling;Luo;IEEE Trans. Semicond. Manuf.,2001

2. Physics and tribology of chemical mechanical planarization;Kasai;J. Phys.: Condens. Matt.,2008

3. The use of monodispersed colloids in the polishing of copper and tantalum;Lu;J. Colloid Interf. Sci.,2003

4. Monoatomic layer removal mechanism in chemical mechanical polishing process: a molecular dynamics study;Si;J. Appl. Phys.,2010

5. Study of AFM-based nanometric cutting process using molecular dynamics;Zhu;Appl. Surf. Sci.,2010
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