Author:
Wood Bingxi Sun,Khaja Fareen Adeni,Colombeau Benjamin P,Sun Shiyu,Waite Andrew,Jin Miao,Chen Hao,Chan Osbert,Thanigaivelan Thirumal,Pradhan Nilay,Gossmann Hans-Joachim L,Sharma Shashank,Chavva Venkataramana R,Cai Man-Ping,Okazaki Motoya,Munnangi Samuel Swaroop,Ni Chi-Nung,Suen Wesley,Chang Chorng-Ping,Mayur Abhilash,Variam Naushad,Brand Adam D
Abstract
The transition from a planar to a FinFET device structure has changed device doping requirements. The fin sidewall doping and activation, crystallinity control of the fin, junction profile and leakage control on the fin are new challenges. With continuous scaling of FinFET technology, the narrower fins become more prone to crystallinity damage by ion implant, and lead to increases in junction leakage and fin parasitic resistance. We have introduced hot implant as a superior doping technique to room-temperature implant for arsenic source drain extension (SDE) and halo implants on vertical narrow fins. We have demonstrated for the first time that hot SDE implant on 6nm CD vertical fins produced single crystalline fins and enabled 5x improvement in fin line resistance and more than 10x reduction in junction leakage compared with a room-temperature SDE implant.
Publisher
The Electrochemical Society
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献