Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Author:

Yeruva Suresh B.,Park Chang-Won,Rabinovich Yakov I.,Moudgil Brij M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface;ECS Journal of Solid State Science and Technology;2024-04-01

2. Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing;ECS Journal of Solid State Science and Technology;2023-07-01

3. Tangential flow filtration of ceria slurry: Application of a single-pass method to improve buff cleaning;Materials Science in Semiconductor Processing;2022-07

4. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy;Advances in Chemical Mechanical Planarization (CMP);2022

5. Process Co-Optimization of CVD and CMP for Tungsten Metallization;ECS Journal of Solid State Science and Technology;2020-10-14

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