Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Published:2009 Issue:10 Volume:156 Page:D408
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Yeruva Suresh B.,Park Chang-Won,Rabinovich Yakov I.,Moudgil Brij M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. The International Technology Roadmap for Semiconductors (2003).

2. Material removal mechanism in chemical mechanical polishing: theory and modeling

3. Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization: modeling and experiments

4. A model for wafer scale variation of material removal rate in chemical mechanical polishing based on viscoelastic pad deformation

5. Feature‐Scale Fluid‐Based Erosion Modeling for Chemical‐Mechanical Polishing

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