Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization: modeling and experiments-Reference-Cited by-同舟云学术

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Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization: modeling and experiments

Published:2000-05 Issue:1-2 Volume:366 Page:181-190
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Thakurta Dipto G,Borst Christopher L,Schwendeman Donald W,Gutmann Ronald J,Gill William N

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections

2. Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects

3. Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing

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1. Advanced polishing methods for atomic-scale surfaces: A review;Materials Today Sustainability;2024-09

2. Chemical mechanical polishing of sapphire elucidated by densely discrete phase model and verified using atomic force microscopy;Tribology International;2024-09

3. Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization;Lubricants;2024-02-19

4. Super hard and brittle material removal mechanism in fixed abrasive lapping: Theory and modeling;Tribology International;2023-06

5. Simulation of slurry residence time during chemical-mechanical polishing using 3-D computational fluid dynamics;Chemical Engineering Research and Design;2023-03

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