Process Co-Optimization of CVD and CMP for Tungsten Metallization
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/abbe9e/pdf
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1. Recent Progress in Phase-Change_newline Memory Technology
2. Processing data where it makes sense: Enabling in-memory computation
3. Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects
4. Effect of CVD Temperature on Orientation, Roughness, and Chemical Mechanical Polish Removal Rate of W Thin Films
5. Phase and Microstructure of ALD-W Films Deposited Using B[sub 2]H[sub 6] and WF[sub 6] and Their Effects on CVD-W Growth
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