Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy-Reference-Cited by-同舟云学术

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Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy

Published:2022 Issue: Volume: Page:413-451
ISSN:
Container-title:Advances in Chemical Mechanical Planarization (CMP)
language:
Short-container-title:

Author:

Künzelmann U.,Schumacher-Härtwig H.

Publisher

Elsevier

Reference101 articles.

1. Investigation and control of chemical and surface chemical effects during dielectric CMP;Abiade,2004

2. Slurry additive effects on the suppression of silicon nitride removal during CMP;America;Electrochem. Solid-State Lett.,2004

3. Interfacial reactivity between ceria and silicon dioxide and silicon nitride surfaces;Carter;Electrochem. Solid-State Lett.,2005

4. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: hydrogen termination and surface morphology;Chabal;J. Vac. Sci. Technol. A,1989

5. Applications of infrared absorption spectroscopy to the microelectronics industry;Chabal;Surf. Sci.,2002

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1. Kinetics and spectroscopic characterization of silica nanoparticles formed while etching quartz in hydrofluoric acid;Materials Chemistry and Physics;2023-09

2. Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing;ECS Journal of Solid State Science and Technology;2023-07-01

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