Improvement of the Thermal Stability of Nickel Stanogermanide by Carbon Pre-Stanogermanidation Implant into GeSn Substrate-Reference-Cited by-同舟云学术

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Improvement of the Thermal Stability of Nickel Stanogermanide by Carbon Pre-Stanogermanidation Implant into GeSn Substrate

Published:2014-12-19 Issue:3 Volume:4 Page:P67-P70
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Liu Qingbo,Geilei Wang,Guo Yiluan,Ke Xingxing,Radamson Henry,Liu Hong,Zhao Chao,Luo Jun

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Nickel-based contact metallization for SiGe MOSFETs: progress and challenges

2. SiGe-channel heterojunction p-MOSFET's

3. Uniaxial-process-induced strained-Si: extending the CMOS roadmap

4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

5. Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in GeSn alloys for MIR applications;Photonics and Nanostructures - Fundamentals and Applications;2024-02

2. Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate;Crystals;2024-01-28

3. Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys;IEEE Journal of the Electron Devices Society;2023

4. Ni-based metallization of GeSn layers: A review and recent advances;Microelectronic Engineering;2023-01

5. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications;Nanomaterials;2021-09-29

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