Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage-Reference-Cited by-同舟云学术

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Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage

Published:2019-04-30 Issue:1 Volume:90 Page:139-146
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Yamamoto Eri,Saito Seiya,Sato Keita,Furutani Kazuma,Yakubo Yuto,Onuki Tatsuya,Matsuzaki Takanori,Atsumi Tomoaki,Ando Yoshinori,Murakawa Tsutomu,Kato Kiyoshi,Yamazaki Shunpei

Publisher

The Electrochemical Society

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT;Journal of Information Display;2023-12-15

2. P‐3: High Temperature Annealing Behavior of IGZO Using Plasma Enhanced Atomic Layer Deposition;SID Symposium Digest of Technical Papers;2022-06

3. Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects;Advanced Materials Interfaces;2022-04-29

4. Impact of Annealing Temperature on Atomic Layer Deposited In–Ga–Zn–O Thin-Film Transistors;ACS Applied Electronic Materials;2022-03-01

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