P‐3: High Temperature Annealing Behavior of IGZO Using Plasma Enhanced Atomic Layer Deposition
Author:
Affiliation:
1. Division of Materials Science and Engineering Hanyang University Seoul Korea
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15678
Reference13 articles.
1. Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates
2. Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage
3. 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications
4. Atomic Layer Deposition: An Overview
5. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films
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