Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects
Author:
Affiliation:
1. Division of Materials Science and Engineering Hanyang University 222, Wangsimni‐ro, Seongdong‐gu Seoul 04763 Republic of Korea
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202200501
Reference43 articles.
1. Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity
2. Stability Improvement of In-Sn-Ga-O Thin-Film Transistors at Low Annealing Temperatures
3. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition
4. 56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT
5. Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel
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