Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors

Published:2009-12-04 Issue:6 Volume:31 Page:660-666
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Cheong Woo-Seok,Lee Jeong-Min,Lee Jong-Ho,Park Sang-Hee Ko,Yoon Sung Min,Byun Chun-Won,Yang Shinhyuk,Chung Sung Mook,Cho Kyoung Ik,Hwang Chi-Sun

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors

4. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

5. Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

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1. The Characteristics and Reliability With Channel Length Dependent on the Deposited Sequence of SiO₂ and Si₃N₄ as PV in LTPS TFTs;IEEE Transactions on Device and Materials Reliability;2024-06

2. Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition;Journal of Alloys and Compounds;2021-09

3. Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al₂O₃ Gate Stack;IEEE Journal of the Electron Devices Society;2020

4. Effect of temperature on hysteresis of dipolar dielectric layer based organic field-effect transistors: A temperature sensing mechanism;Sensors and Actuators A: Physical;2018-01

5. Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer;Scientific Reports;2016-11-23

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