Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer-Reference-Cited by-同舟云学术

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Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Published:2016-11-23 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Kumaresan Yogeenth,Pak Yusin,Lim Namsoo,kim Yonghun,Park Min-Ji,Yoon Sung-Min,Youn Hyoc-Min,Lee Heon,Lee Byoung Hun,Jung Gun Young

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep37764.pdf

Reference40 articles.

1. Sekitani, T., Zschieschang, U., Klauk, H. & Someya, T. Flexible organic transistors and circuits with extreme bending stability. Nat. Mater. 9, 1015–1022, doi: 10.1038/nmat2896 (2010).

2. He, Q. et al. Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications. Small 8, 2994–2999, doi: 10.1002/smll.201201224 (2012).

3. McAlpine, M. C., Ahmad, H., Wang, D. & Heath, J. R. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors. Nat. Mater. 6, 379–384, doi: 10.1038/nmat1891 (2007).

4. Hsu, H. H., Chang, C. Y. & Cheng, C. H. A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature. IEEE Electron Device Lett. 34, 768–770, doi: 10.1109/led.2013.2258455 (2013).

5. Liu, X. et al. Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors. Adv. Mater. 26, 7399–7404, doi: 10.1002/adma.201401732 (2014).

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