Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways-Reference-Cited by-同舟云学术

Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways

Published:2022-12-20 Issue:1 Volume:15 Page:1525-1534
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Ji-Min¹,Lee Hyunkyu²,Lee GunOh³,Jang Seong Cheol¹,Chang Yun Hee¹,Hong Hyunmin⁴,Chung Kwun-Bum⁴,Lee Kyung Jin³^ORCID,Kim Dae Hwan²^ORCID,Kim Hyun-Suk¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Chungnam National University, Daejeon34134, Republic of Korea

2. School of Electrical Engineering, Kookmin University, Seoul02707, Republic of Korea

3. Department of Chemical Engineering & Applied Chemistry, Chungnam National University, Daejeon34134, Republic of Korea

4. Division of Physics and Semiconductor Science, Dongguk University, Seoul04620, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c16881

Reference48 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Metal-induced n+/n homojunction for ultrahigh electron mobility transistors

5. Amorphous Mixture of Two Indium-Free BaSnO3 and ZnSnO3 for Thin-Film Transistors with Balanced Performance and Stability

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