Amorphous Mixture of Two Indium-Free BaSnO3 and ZnSnO3 for Thin-Film Transistors with Balanced Performance and Stability-Reference-Cited by-同舟云学术

Amorphous Mixture of Two Indium-Free BaSnO3 and ZnSnO3 for Thin-Film Transistors with Balanced Performance and Stability

Published:2019-12-31 Issue:3 Volume:12 Page:3719-3726
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Nahm Ho-Hyun¹^ORCID,Kim Hyoung-Do²,Park Ji-Min²,Kim Hyun-Suk²^ORCID,Kim Yong-Hyun¹^ORCID

Affiliation:

1. Graduate School of Nanoscience and Technology and Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea

2. Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b17456

Reference41 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Material characteristics and applications of transparent amorphous oxide semiconductors

3. Electronic Defects in Amorphous Oxide Semiconductors: A Review

4. Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

5. Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of oxygen pressure during the growth of ZnSnO3 epitaxial thin films on LiNbO3 substrates;Applied Surface Science;2023-11

2. A Phase Engineering Strategy of Perovskite‐Type ZnSnO₃:Nd for Boosting the Sonodynamic Therapy Performance;Advanced Functional Materials;2023-03-21

3. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips;Advanced Materials;2023-01-10

4. Optical and electrical properties of BaSnO₃ and In₂O₃ mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature;Chinese Physics B;2023-01-01

5. Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways;ACS Applied Materials & Interfaces;2022-12-20