Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3075612
Reference19 articles.
1. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
2. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
3. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
4. Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors
5. Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering
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