W‐Band MMIC chipset in 0.1‐μm mHEMT technology-Reference-Cited by-同舟云学术

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

Published:2020-08 Issue:4 Volume:42 Page:549-561
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI Journal

Author:

Lee Jong‐Min¹^ORCID,Chang Woo‐Jin¹,Kang Dong Min¹,Min Byoung‐Gue¹,Yoon Hyung Sup¹,Chang Sung‐Jae²,Jung Hyun‐Wook²,Kim Wansik³,Jung Jooyong³,Kim Jongpil³,Seo Mihui⁴,Kim Sosu⁴

Affiliation:

1. ICT Creative Research Laboratory Electronics and Telecommunications Research Institute Daejeon Rep. of Korea

2. DMC Convergence Research Department Electronics and Telecommunications Research Institute Daejeon Rep. of Korea

3. LIG Nex1 Co., Ltd Yongin Rep. of Korea

4. Agency for Defense Development Daejeon Rep. of Korea

Funder

Agency for Defense Development

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.4218/etrij.2020-0120

Reference21 articles.

1. A SiGe-Based 240-GHz FMCW Radar System for High-Resolution Measurements

2. High Performance Millimeter-Wave Image Reject Low-Noise Amplifier Using Inter-stage Tunable Resonators

3. A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

4. DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs

5. An inductorless active mixer using stacked nMOS/pMOS configuration and LO shaping technique

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1. High-Efficiency Class-B/F W-Band Balanced Frequency Sixtupler in GaN HEMT Technology;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27

2. W-Band GaN HEMT Frequency Multipliers;IEEE Transactions on Microwave Theory and Techniques;2023-10

3. Optimized recess etching criteria for T‐gate fabrication achieving f_t = 290 GHz at L_g = 124 nm in metamorphic high electron mobility transistor with In_0.7Ga_0.3As channel;Electronics Letters;2023-07

4. Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate;Micromachines;2022-12-25

5. Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process;ETRI Journal;2022-11-30