Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
Author:
Affiliation:
1. ICT Creative Research Laboratory Electronics and Telecommunications Research Institute Daejeon Republic of Korea
2. DMC Convergence Research Department Electronics and Telecommunications Research Institute Daejeon Republic of Korea
Funder
Ministry of Science and ICT, South Korea
Publisher
Wiley
Subject
Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.4218/etrij.2021-0370
Reference13 articles.
1. High Performance Millimeter-Wave Image Reject Low-Noise Amplifier Using Inter-stage Tunable Resonators
2. A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems
3. W‐Band MMIC chipset in 0.1‐μm mHEMT technology
4. DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
5. The importance of electrochemistry-related etching in the gate-groove fabrication for InAlAs/InGaAs HFETs
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3. Optimized recess etching criteria for T‐gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel;Electronics Letters;2023-07
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