An inductorless active mixer using stacked nMOS/pMOS configuration and LO shaping technique

Author:

Guo Benqing12ORCID,Chen Jun1,Wang Xuebing1,Chen Hongpeng1

Affiliation:

1. Department of Communication Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, West High-Tech Zone, Chengdu 611731, China

2. Department of Electrical, Computer and Biomedical Engineering, University of Pavia, Pavia 27100, Italy

Abstract

In this paper, a CMOS active down-conversion mixer is presented for wideband applications. Specifically, a LO generation chain is suggested to convert AC LO signal to shaped trapezoid burst, which reduces the sinusoidal LO power level requirement by the mixer. The current-reuse technique by stacked nMOS/pMOS architecture is used to save the power consumption of the circuit. Moreover, this complementary configuration is also employed to compensate second-order nonlinearity of the circuit. Implemented in a 0.18-[Formula: see text]m CMOS process, post-simulations show that, driven by only −10 dBm sinusoidal LO signal, the proposed inductorless mixer provides a maximal conversion gain of 15.7 dB and a noise figure (NF) of 9.1–12 dB across RF input frequency range 0.5–1.6 GHz. The IIP3 and IP1dB of 3.5 dBm and −4.8 dBm are obtained, respectively. The mixer core only consumes 3.6 mW from a 1.8-V supply.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities of China

China Scholarship Council

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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