Design and Performance Analysis of W-Band Low Noise Amplifier for RFIC-5G Mobile Systems

Abstract

This paper presents a new approach of the design of a W-band low noise amplifier (LNA) in a 0.13 µm CMOS technology for narrowband and wideband applications. The proposed LNA utilizes input matching bandwidth extensions based on the source degeneration topology, and it is designed and optimized at a center frequency of 94 GHz and a supply voltage of 1.2 V. The obtained results exhibit a noise figure of 3 dB, a power gain of 32 dB, and a VSWR of 1.1. The design technique of this LNA is based on an agreeable tradeoff between the available gain of 30 dB and the noise figure of 3 dB, which leads to good bilateral stability and high linearity described by an input third-order intercept point of -17 dBm. A detailed performance analysis is presented and discussed along this paper. With the aim of a complete and robust integration, all lumped elements and transmission lines are integrated on a silicon PCB having ɛr = 11.7 and a dielectric loss TanΔ = 0.001 for low manufacturing costs. The prominent results of this LNA indicate that it is suitable for 94 GHz-image-radar and RFIC-5G mobile systems.