Relaxation features of own photoconductivity in p-GaSe single crystals

Abstract

The effects of the electric field, temperature, and initial value of the dark resistivity on the relaxation processes of intrinsic photoconductivity in single crystals of gallium monoselenide (p-GaSe) are studied. It is shown that although in all the samples under study, in the processes of establishment and disappearance of photoconductivity, the process of attachment of nonequilibrium charge carriers by attracting and repulsive centers in weak and stronger electric fields is, accordingly, inevitable, however, in samples of high-resistivity crystals, it is also necessary to take into account the significant influence of random macroscopic defects caused by layering.