Negative and persistent photoconductivity in Bi-doped Pb0.5Sn0.5Te epitaxial films-Reference-Cited by-同舟云学术

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Negative and persistent photoconductivity in Bi-doped Pb0.5Sn0.5Te epitaxial films

Published:2024-09 Issue: Volume: Page:116113
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Pires A.S.,do Prado W.P.,Kawata B.A.^ORCID,Vargas L.M.B.,da Silva M.J.^ORCID,Rappl P.H.O.^ORCID,Abramof E.,de Castro S.^ORCID,Peres M.L.

Funder

Coordination of Higher Education Personnel Improvement

National Council for Scientific and Technological Development

Brazilian Space Agency

Publisher

Elsevier BV

Reference39 articles.

1. Thermoelectric performance of PbSnTeSe high-entropy alloys;Fan;Mater. Res. Lett.,2017

2. Mid-infrared transmission imaging and spectroscopy with PbSnTe laser diodes grown with stoichiometry-controlled liquid-phase epitaxy;Yasuda;Infrared Phys. Technol.,2015

3. Oriented Growth of Pb 1− x Sn x Te Nanowire Arrays for Integration of Flexible Infrared Detectors;Wang;Adv. Mater.,2016

4. Investigations of the structural, optical, and electrical properties of Pb0.8Sn0.2Te layers grown on Si(100) using BaF2/CaF2 buffer;Ostertak;Thin Solid Films,2009

5. Band crossing evidence in PbSnTe observed by optical transmission measurements;Ferreira;Brazilian J. Phys.,1999

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