Characterization of rare-earth-doped photocells based on p-GaSe/n-InSe heterojunctions-Reference-Cited by-同舟云学术

Characterization of rare-earth-doped photocells based on p-GaSe/n-InSe heterojunctions

Published:2024-08-05 Issue: Volume: Page:
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

Abdinov A. Sh.¹^ORCID,Babayeva R. F.²^ORCID,Aliyev Y. I.²³^ORCID

Affiliation:

1. Baku State University, 23 Z. Khalilov, Street, Baku AZ1148, Azerbaijan

2. Azerbaijan State University of Economics, 6 Istiglaliyyat, Street Baku AZ1001, Azerbaijan

3. Western Caspian University, 31 Istiglaliyyat, Street, Baku AZ1001, Azerbaijan

Abstract

The effect of doping with holmium (Ho) and erbium (Er) rare-earth elements (REE) on the main parameters and characteristics of photocells based on p-GaSe/n-InSe heterostructures has been experimentally studied. Photo-electromotive force measurements were performed for undoped and rare-earth doped samples and obtained results comparatively analyzed. The light characteristic of the samples shows that significant improvement are observed in the rare-earth doped crystals. The possibility of targeted control, as well as increasing their reproducibility and stability by changing the content of the introduced impurity ([Formula: see text]), is shown. The optimal situation is provided by alloying Er with [Formula: see text] at.%.

Publisher

World Scientific Pub Co Pte Ltd

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979225500894

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