DSA patterning options for logics and memory applications-Reference-Cited by-同舟云学术

DSA patterning options for logics and memory applications

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Liu Chi-Chun¹,Franke Elliott²,Mignot Yann³,LeFevre Scott²,Sieg Stuart¹,Chi Cheng¹,Meli Luciana¹,Parnell Doni⁴,Schmidt Kristin⁵,Sanchez Martha⁵,Singh Lovejeet⁶,Furukawa Tsuyoshi⁶,Seshadri Indira¹,De Silva Ekmini Anuja¹,Tsai Hsinyu⁷,Lai Kafai⁷,Truong Hoa⁵,Farrell Richard²,Bruce Robert⁷,Somervell Mark⁸,Sanders Daniel⁸,Felix Nelson¹,Arnold John¹,Hetzer David²,Ko Akiteru²,Metz Andrew²,Colburn Matthew¹,Corliss Daniel¹

Affiliation:

1. IBM Corp. (United States)

2. TEL Technology Ctr., America, LLC (United States)

3. Albany NanoTech (United States)

4. Tokyo Electron Europe Ltd. (Netherlands)

5. IBM Almaden Research Ctr. (United States)

6. JSR Micro, Inc. (United States)

7. IBM Thomas J. Watson Research Ctr. (United States)

8. Tokyo Electron America, Inc. (United States)

Publisher

SPIE

Reference24 articles.

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2. Graphoepitaxial and chemoepitaxial methods for creating line-space patterns at 33nm pitch: comparison to a HVM process;Millward,2015

3. Defect mitigation and root cause studies in 14 nm half-pitch chemo-epitaxy directed self-assembly LiNe flow

4. Manufacturability of dense hole arrays with directed self-assembly using the CHIPS flow;Singh,2016

5. Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

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