Investigation into a prototype extreme ultraviolet low-n attenuated phase-shift mask-Reference-Cited by-同舟云学术

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Investigation into a prototype extreme ultraviolet low-n attenuated phase-shift mask

Published:2021-05-21 Issue:02 Volume:20 Page:
ISSN:2708-8340
Container-title:Journal of Micro/Nanopatterning, Materials, and Metrology
language:
Short-container-title:J. Micro/Nanopattern. Mats. Metro.

Author:

van Lare Claire¹,Timmermans Frank¹,Finders Jo¹,Romanets Olena¹,Man Cheuk-Wah¹,van Adrichem Paul¹,Ikebe Yohei²,Aizawa Takeshi²,Onoue Takahiro²

Affiliation:

1. ASML Netherlands B.V., Eindhoven

2. HOYA Group LSI Division, Tokyo

Publisher

SPIE-Intl Soc Optical Eng

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Best focus alignment through pitch strategies for hyper-NA EUV lithography;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective;Micro and Nano Engineering;2023-09

4. The power of algorithmic employed in a metrology system: AIMS EUV Digital Flex Illu;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

5. Image contrast metrology for EUV lithography;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

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