Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography-Reference-Cited by-同舟云学术

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Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography

Published:2024-04-10 Issue: Volume:11609 Page:1
ISSN:
Container-title:Optical and EUV Nanolithography XXXVII
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Author:

Erdmann Andreas,Mesilhy Hazem,Evanschitzky Peter,Bottiglieri Gerardo,Brunner Tim,van Setten Eelco,van Lare Claire,van de Kerkhof Mark A.

Publisher

SPIE

Reference27 articles.

1. Dual monopole exposure strategy to improve extreme ultraviolet imaging

2. High-NA EUV lithography exposure tool: advantages and program progress

3. EUV resolution enhancement techniques (RETs) for k10.4 and below

4. Imaging enhancement (low k1 imaging) in EUV lithography: Current status and future resolution enhancement techniques;Finders;SPIE Advanced Lithography,2021

5. Resolution Enhancement Techniques in Optical Lithography

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Maximizing image contrast in printing dense lines-and-spaces patterns;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-05-30

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