EUV resolution enhancement techniques (RETs) for k10.4 and below-Reference-Cited by-同舟云学术

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EUV resolution enhancement techniques (RETs) for k10.4 and below

Published:2015-03-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Hsu Stephen,Howell Rafael,Jia Jianjun,Liu Hua-Yu,Gronlund Keith,Hansen Steve,Zimmermann Jörg

Publisher

SPIE

Reference20 articles.

1. An Innovative Source-Mask co-Optimization (SMO) Method for Extending Low k1 Imaging;Hsu,2008

2. Pattern Placement error aware source mask optimization;Hsu,2014

3. Clear Sub-Resolution Assist Features for EUV;Burkhardt,2014

4. Hoyoung Kang, Proc. SPIE. 7520, Lithography Asia (2009), 752037. December 03, 2009

5. Asymmetric Properties of the Aerial Image in Extreme Ultraviolet Lithography

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1. Source mask optimization (SMO) study for high-NA EUV lithography to achieve single patterning on random logic metal;DTCO and Computational Patterning III;2024-04-10

2. Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Interaction between aberrations and mask 3D effects for low-n and Ta-based absorbers in extreme ultraviolet lithography;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-04-28

4. Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material;Physical Chemistry Chemical Physics;2023

5. Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-11-25

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