How curvilinear mask patterning will enhance the EUV process window: a study using rigorous wafer+mask dual simulation-Reference-Cited by-同舟云学术

How curvilinear mask patterning will enhance the EUV process window: a study using rigorous wafer+mask dual simulation

Published:2019-06-27 Issue: Volume: Page:
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Container-title:Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology
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Author:

Pearman Ryan,Ungar P. Jeffrey,Shirali Nagesh,Shendre Abishek,Niewczas Mariusz,Pamg Leo,Fujimura Aki

Publisher

SPIE

Reference10 articles.

1. E-beam shot count estimation at 32 nm HP and beyond;Jin;Proc. SPIE,2009

2. Enhancing ILT process window using curvilinear mask patterning: dual mask-wafer simulation;Ryan;Proc. SPIE,2019

3. ILT optimization of EUV masks for sub-7nm lithography;Kevin;Proc. SPIE,2017

4. Future mask writers requirements for the sub-10nm node era;Mahesh;Proc. SPIE,2012

5. 2018 mask makers’ survey conducted by the eBeam Initiative;Aki;Proc. SPIE,2018

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