Inverse lithography physics-informed deep neural level set for mask optimization

Abstract

As the feature size of integrated circuits continues to decrease, optical proximity correction (OPC) has emerged as a crucial resolution enhancement technology for ensuring high printability in the lithography process. Recently, level set-based inverse lithography technology (ILT) has drawn considerable attention as a promising OPC solution, showcasing its powerful pattern fidelity, especially in advanced processing. However, the massive computational time consumption of ILT limits its applicability to mainly correcting partial layers and hotspot regions. Deep learning (DL) methods have shown great potential in accelerating ILT. However, the lack of domain knowledge of inverse lithography limits the ability of DL-based algorithms in process window (PW) enhancement, etc. In this paper, we propose an inverse lithography physics-informed deep neural level set (ILDLS) approach for mask optimization. This approach utilizes level set-based ILT as a layer within the DL framework and iteratively conducts mask prediction and correction to significantly enhance printability and PW in comparison with results from pure DL and ILT. With this approach, the computational efficiency is significantly improved compared with ILT. By gearing up DL with the knowledge of inverse lithography physics, ILDLS provides a new and efficient mask optimization solution.