Author:
Ueda K.,Koshihara S.,Mizuno T.
Cited by
5 articles.
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1. An optimized parameter guidance system for line/space CD metrology;Metrology, Inspection, and Process Control for Microlithography XXXIII;2019-03-26
2. Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-10-12
3. Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography;SPIE Proceedings;2015-03-19
4. Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography;Metrology, Inspection, and Process Control for Microlithography XXVIII;2014-04-02
5. Simulation of electron scattering in a scanning electron microscope for subsurface metrology;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-11