Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography-Reference-Cited by-同舟云学术

Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography

Published:2016-10-12 Issue:4 Volume:15 Page:044001
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Okai Nobuhiro¹,Lavigne Erin²,Hitomi Keiichiro¹,Halle Scott²,Hotta Shoji¹,Koshihara Shunsuke³,Yamaguchi Atsuko¹,Tanaka Junichi¹,Bailey Todd⁴

Affiliation:

1. Research and Development Group, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

2. IBM Semiconductor Research and Development Center, 257 County Road, 156, Albany, New York 12205, United States

3. Hitachi High-Technologies Corporation, 882 Ichige, Hitachinaka-shi, Ibaraki-ken 312-8503, Japan

4. IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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2. Double patterning for 32nm and below: an update

3. Technological merits, process complexity, and cost analysis of self-aligned multiple patterning

4. Overview: continuous evolution on double-patterning process

5. Maintaining Moore’s law: enabling cost-friendly dimensional scaling

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