Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography-Reference-Cited by-同舟云学术

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Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography

Published:2015-03-19 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Okai Nobuhiro,Lavigne Erin,Hitomi Keiichiro,Halle Scott,Hotta Shoji,Koshihara Shunsuke,Tanaka Junichi,Bailey Todd

Publisher

SPIE

Reference13 articles.

1. Study of Measurement Condition Optimization in Critical Dimension-Scanning Electron Microscope

2. Methodology for Establishing CD-SEM Robust Metrology Algorithm for Development Cycles Applications;Hitomi,2012

3. Mechanism of photoresist shrinkage investigated by single-line scan of electron beam;Ohashi,2012

4. Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography;Okai,2014

5. EUV into production with ASML’s NXE platform;Wagner,2010

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Model-based contour extraction: an enabler for very low-frame SEM images metrology;Metrology, Inspection, and Process Control XXXVI;2022-05-26

2. Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-07-19

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