Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process-Reference-Cited by-同舟云学术

Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Published:2016-07-19 Issue:3 Volume:15 Page:034002
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Hitomi Keiichiro¹,Halle Scott²,Miller Marshal³,Graur Ioana³,Saulnier Nicole²,Dunn Derren²,Okai Nobuhiro¹,Hotta Shoji¹,Yamaguchi Atuko¹,Komuro Hitoshi⁴,Ishimoto Toru⁵,Koshihara Shunsuke⁴,Hojo Yutaka⁴

Affiliation:

1. Hitachi Ltd., Central Research Laboratory, Nano-Process Research Department, 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

2. IBM Corp., 257 Fuller Road, Suite 3100, Albany, New York 12203, United States

3. IBM Corp., 2070 Route 52, Hopewell Junction, New York 12533, United States

4. Hitachi-HighTechnologies Corporation, 882 Ichige, Hitachinaka-Shi, Ibaraki 312-8504, Japan

5. Hitachi-HighTechnologies Corporation, 24-14, Nishi-Shimbashi, 1-Chome, Minato-ku, Tokyo 105-8717, Japan

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Challenges of implementing contour modeling in 32nm technology

2. SEM image contouring for OPC model calibration and verification

3. Challenges of OPC model calibration from SEM contours

4. Bringing SEM-contour based OPC to production

5. Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

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3. Metrology for the next generation of semiconductor devices;Nature Electronics;2018-10

4. Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation;Nanotechnology;2017-12-22

5. Contour metrology using critical dimension atomic force microscopy;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-12-15