Contour metrology using critical dimension atomic force microscopy-Reference-Cited by-同舟云学术

Contour metrology using critical dimension atomic force microscopy

Published:2016-12-15 Issue:4 Volume:15 Page:044006
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Orji Ndubuisi G.¹,Dixson Ronald G.¹,Ng Boon Ping²,Vladár András E.¹,Postek Michael T.¹

Affiliation:

1. National Institute of Standards and Technology, Engineering Physics Division, Physical Measurement Laboratory (PML), 100 Bureau Drive, Gaithersburg, Maryland 20899, United States

2. Singapore Institute of Manufacturing Technology, (SIMTECH), 71 Nanyang Drive, Singapore 638075, Singapore

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Enabling scanning electron microscope contour-based optical proximity correction models

2. High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope–based contours in next-generation lithography

3. Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

4. Accurate device simulations through CD-SEM-based edge-contour extraction

5. Study of the contour-based optical proximity correction methodology

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