Addressing FinFET metrology challenges in 1× node using tilt-beam critical dimension scanning electron microscope-Reference-Cited by-同舟云学术

Addressing FinFET metrology challenges in 1× node using tilt-beam critical dimension scanning electron microscope

Published:2014-10-01 Issue:4 Volume:13 Page:041407
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Zhang Xiaoxiao¹,Zhou Hua²,Ge Zhenhua²,Vaid Alok¹,Konduparthi Deepasree¹,Osorio Carmen¹,Ventola Stefano²,Meir Roi³,Shoval Ori³,Kris Roman³,Adan Ofer³,Bar-Zvi Maayan³

Affiliation:

1. GlobalFoundries, 400 Stonebreak Road Extension, Malta, New York 12020, United States

2. Applied Materials Inc., 2911 Route 9 Suite 3, Malta, New York, United States

3. Applied Materials Israel, 9 Oppenheimer Street, Rehovot 76705, Israel

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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5. The coming of age of tilt CD-SEM

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