Modeling and algorithm of three-dimensional metrology with critical dimension scanning electron microscope

Abstract

To address the challenges of accurate metrology of height and sidewall angle (SWA) of three-dimensional structures with critical dimension scanning electron microscopy, general modeling and algorithms based on tilted electron beam technology and the corresponding application skills are proposed, and the validity and error accuracy are evaluated as well. Three typical structures, the trapezoid, inverted trapezoid, and step, are investigated with Monte Carlo simulation. The maximum derivative method is used to extract key parameters from the secondary electron linescan. The efficiency of the proposed modeling, algorithms, and the accuracy of the calculated height and SWA are improved further with the application of wavelet transform.