Electron beam metrology for advanced technology nodes-Reference-Cited by-同舟云学术

Electron beam metrology for advanced technology nodes

Published:2019-05-21 Issue:SD Volume:58 Page:SD0801
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lorusso Gian Francesco,Horiguchi Naoto,Bömmels Jürgen,Wilson Christopher J.,bosch Geert Van den,Kar Gouri Sankar,Ohashi Takeyoshi,Sutani Takumichi,Watanabe Ryota,Takemasa Yoshikata,Ikota Masami

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab1475/pdf

Reference31 articles.

1. Metrology for the next generation of semiconductor devices

2. CD-SEM metrology for sub-10nm width features

3. Addressing FinFET metrology challenges in 1× node using tilt-beam critical dimension scanning electron microscope

4. High-volume process monitoring of FEOL 22nm FinFET structures using an automated STEM

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