Combining metrology techniques for in-line control of thin SiGe:B layers-Reference-Cited by-同舟云学术

Combining metrology techniques for in-line control of thin SiGe:B layers

Published:2014-09-15 Issue:4 Volume:13 Page:041402
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Le Cunff Delphine¹,Nguyen Thomas¹,Duru Romain¹,Abbate Francesco¹,Hoglund Jonny²,Laurent Nicolas²,Pernot Frederic³,Wormington Matthew³

Affiliation:

1. STMicroelectronics, Process Metrology Department, 850 rue Jean Monnet, 38926 Crolles Cedex, France

2. Semilab AMS, 47 Manning Road, Billerica, Massachusetts 01821, United States

3. Jordan Valley Semiconductors, Zone #6 Ramat Gavriel, Industrial Zone, Migdal Ha’Emek 23100, Israel

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. In-line metrology capability for epitaxial multi-stack SiGe layers;Le-Cunff,2012

2. Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique

3. Low temperature silicon and Si1−xGex epitaxy by rapid themal chemical vapour deposition using hydrides

4. MBIR for in-line doping of epitaxial SiGe:B and SiC:P layers;Duru,2013

5. Product wafer monitoring of ultrashallow channel implants with an elastic metal gate

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